Instruct: Given the title of a scientific paper, retrieve paper titles that are cited by the given paper
Query: Vertical Si-Nanowire $n$-Type Tunneling FETs With Low Subthreshold Swing ($\leq \hbox{50}\ \hbox{mV/decade}$ ) at Room Temperature
Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec
Work-Function-Tuned TiN Metal Gate FDSOI Transistors for Subthreshold Operation
Investigation of electrically gate-all-around hexagonal nanowire FET (HexFET) architecture for 5 nm node logic and SRAM applications
Vacuum gate dielectric gate-all-around nanowire for hot carrier injection and bias temperature instability free transistor
FinFET scaling to 10 nm gate length
Metal Grain Granularity Study on a Gate-All-Around Nanowire FET
Tensile-Strained Nanoscale Ge/In0.16Ga0.84As Heterostructure for Tunnel Field-Effect Transistor
A 10 nm Si-based bulk FinFETs 6T SRAM with multiple fin heights technology for 25% better static noise margin
The Impact of Layout-Dependent STI Stress and Effective Width on Low-Frequency Noise and High-Frequency Performance in Nanoscale nMOSFETs
Exhaustive experimental study of tunnel field effect transistors (TFETs): From materials to architecture
Analytical model to estimate the subthreshold swing of SOI FinFET
GaN-on-Si Vertical Schottky and p-n Diodes
Determination of optimum structure of 4H-SiC Trench MOSFET
4H-SiC Trench MOSFET With Floating/Grounded Junction Barrier-controlled Gate Structure
NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures
Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs
Schottky Barrier Carbon Nanotube Transistor: Compact Modeling, Scaling Study, and Circuit Design Applications
Power aware FinFET and lateral nanosheet FET targeting for 3nm CMOS technology
Nanoscale FinFETs with gate-source/drain underlap
Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges
70-nm impact-ionization metal-oxide-semiconductor (I-MOS) devices integrated with tunneling field-effect transistors (TFETs)
greying of the human hair : a worldwide survey , revisiting the ' 50 ' rule of thumb .
risk assessment in oil and gas construction projects .
Applications Of Artificial Intelligence
Evaluation of overshoot rate of lightning impulse withstand voltage test waveform based on new base curve fitting methods - application to practical diverse waveforms