Instruct: Given the title of a scientific paper, retrieve paper titles that are cited by the given paper
Query: Silicon carbide pinched barrier rectifier (PBR)
A dual-metal-trench Schottky pinch-rectifier in 4H-SiC
Orthogonal Positive-Bevel Termination for Chip-Size SiC Reverse Blocking Devices
High performance SiC trench devices with ultra-low ron
Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier
An Analytical Model With 2-D Effects for 4H-SiC Trenched Junction Barrier Schottky Diodes
High voltage dual active bridge with series connected high voltage silicon carbide (SiC) devices
Planar edge termination design and technology considerations for 1.7-kV 4H-SiC PiN diodes
4H-SiC Trench MOSFET With Floating/Grounded Junction Barrier-controlled Gate Structure
Silicon carbide JFET resonant inverter for induction heating home appliances
SiC solid state circuit breaker with an adjustable current-time tripping profile
Characterization of 1.2 kV SiC super-junction SBD implemented by trench and implantation technique
Evaluation of SiC BJTs for High-Power DC–DC Converters
Optimized Power Modules for Silicon Carbide mosfet
Silicon carbide power electronics for electric vehicles
Evaluation of SiC MOSFETs for a high efficiency three-phase buck rectifier
A gate drive circuit for silicon carbide JFET
Temperature dependent Pspice model of silicon carbide power MOSFET
Monolithically Integrated 4H-SiC MOSFET and JBS Diode (JBSFET) Using a Single Ohmic/Schottky Process Scheme
Superconductivity in heavily boron-doped silicon carbide
High-Temperature Characteristics of 3-kV 4H-SiC Reverse Blocking MOSFET for High-Performance Bidirectional Switch
Intuitive experimentation in the physical world
Searching for a vulnerable dark triad: Comparing factor 2 psychopathy, vulnerable narcissism, and borderline personality disorder.
Twelve tips for developing an integrated curriculum
Decentralized and centralized model predictive control to reduce the bullwhip effect in supply chain management
Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers