Instruct: Given a paper title, retrieve paper titles that are cited by the given paper.
Query: Design and Experimental Study of 4H-SiC Trenched Junction Barrier Schottky Diodes
A dual-metal-trench Schottky pinch-rectifier in 4H-SiC
2nd generation 600V SiC Schottky diodes use merged pn/Schottky structure for surge overload protection
High-Temperature Characteristics of 3-kV 4H-SiC Reverse Blocking MOSFET for High-Performance Bidirectional Switch
Design and Characterization of High-Voltage 4H-SiC p-IGBTs
Impact of grounding the bottom oxide protection layer on the short-circuit ruggedness of 4H-SiC trench MOSFETs
Schottky barrier height reduction of NiGe/Ge junction by P ion implantation for metal source/drain Ge CMOS devices
Schottky Barrier Carbon Nanotube Transistor: Compact Modeling, Scaling Study, and Circuit Design Applications
Investigation on the Breakdown Failure in Stripe Trench-Gate Field-Stop Insulated Bipolar Transistor With Low-Saturation Voltage
Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier
A New Edge Termination Technique for High-Voltage Devices in 4H-SiC–Multiple-Floating-Zone Junction Termination Extension
Graphene-On-Silicon Schottky Junction Solar Cells
Schottky-Barrier Carbon Nanotube Field Effect Transistor Modeling
SiC Trench MOSFET With Shielded Fin-Shaped Gate to Reduce Oxide Field and Switching Loss
Evaluation of SiC BJTs for High-Power DC–DC Converters
Split-Gate 1.2-kV 4H-SiC MOSFET: Analysis and Experimental Validation
First experimental demonstration of SiC super-junction (SJ) structure by multi-epitaxial growth method
SPICE Model of SiC JFETs for Circuit Simulations
The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices
High temperature (≫200°C) isolated gate drive topologies for Silicon Carbide (SiC) JFET
Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges
rethinking the concepts of ' local or global processors ' : evidence from williams syndrome , down syndrome , and autism spectrum disorders .
Information system security commitment: A study of external influences on senior management
Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers
INTERNET OF THINGS : 1 A REVIEW OF APPLICATIONS & 2 TECHNOLOGIES
Position and speed tracking control of inverted pendulum based on double PID controllers