Instruct: Given the title of a paper, retrieve paper titles that are cited by the given paper.
Query: The influence of shallow trench isolation angle on hot carrier effect of STI-based LDMOS transistors
Investigation on Hot-Carrier-Induced degradation of STI-nLDMOS with two-step-oxide process for high side application
Determination of optimum structure of 4H-SiC Trench MOSFET
The Impact of Layout-Dependent STI Stress and Effective Width on Low-Frequency Noise and High-Frequency Performance in Nanoscale nMOSFETs
Advanced n-channel LDMOS with ultralow specific on-resistance by 0.18 μm epitaxial BCD technology
Investigation on the Breakdown Failure in Stripe Trench-Gate Field-Stop Insulated Bipolar Transistor With Low-Saturation Voltage
Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation
The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, and Reliability
Insight Into Gate-Induced Drain Leakage in Silicon Nanowire Transistors
On the Origin of Thermal Runaway in a Trench Power MOSFET
Monolithic integration of trench vertical DMOS (VDMOS) power transistors into a BCD process
The Temperature Dependence of Mismatch in Deep-Submicrometer Bulk MOSFETs
Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges
Impact of the gate-stack change from 40nm node SiON to 28nm High-K Metal Gate on the Hot-Carrier and Bias Temperature damage
Impact of reducing STI-induced stress on layout dependence of MOSFET characteristics
SiC Trench MOSFET With Shielded Fin-Shaped Gate to Reduce Oxide Field and Switching Loss
A physically based scalable SPICE model for Shielded-Gate Trench Power MOSFETs
The Trench Power MOSFET: Part I—History, Technology, and Prospects
I-MOS: a novel semiconductor device with a subthreshold slope lower than kT/q
RF LDMOS Characterization and Its Compact Modeling
Hot-carrier induced dielectric breakdown (HCIDB) challenges of a new high performance LDMOS generation
a survey of clustering data mining techniques .
0.18um BCD technology with best-in-class LDMOS from 6 V to 45 V
Eight-Way Substrate Integrated Waveguide Power Divider With Low Insertion Loss
Dependency-Based Open Information Extraction
Examining desensitization using facial electromyography: Violent videogames, gender, and affective responding