Instruct: Given the title of a paper, retrieve paper titles that are cited by the given paper
Query: Hot-Carrier Degradation in Power LDMOS: Selective LOCOS- Versus STI-Based Architecture
Power LDMOS with novel STI profile for improved Rsp, BVdss, and reliability
The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, and Reliability
Design of a Reliable p-Channel LDMOS FET With RESURF Technology
Lateral thinking about power devices (LDMOS)
Channel Hot Carrier Degradation Mechanism in Long/Short Channel $n$-FinFETs
Implementation of 85V High Side LDMOS with n-layer in a 0.35um BCD Process
RF LDMOS Characterization and Its Compact Modeling
Self-heating in advanced CMOS technologies
A RESURF-Enhanced p-Channel Trench SOI LDMOS With Ultralow Specific on-Resistance
Multiple Trench Split-gate SOI LDMOS Integrated With Schottky Rectifier
A power-efficient LVDS driver circuit in 0.18-μm CMOS technology
Monolithic integration of trench vertical DMOS (VDMOS) power transistors into a BCD process
Capacitance Characteristics Improvement and Power Enhancement for RF LDMOS Transistors Using Annular Layout Structure
Impact of the gate-stack change from 40nm node SiON to 28nm High-K Metal Gate on the Hot-Carrier and Bias Temperature damage
LDMOS Technology for RF Power Amplifiers
On the Origin of Thermal Runaway in a Trench Power MOSFET
Switching behavior of RF-LDMOS for class-F power amplifier in TCAD
High-Efficiency Cellular Power Amplifiers Based on a Modified LDMOS Process on Bulk Silicon and Silicon-On-Insulator Substrates With Integrated Power Management Circuitry
Enhanced PMOS NBTI degradation due to halo implant channeling
Impact of self-heating effect on long-term reliability and performance degradation in CMOS circuits
Amoeba-Cache: Adaptive Blocks for Eliminating Waste in the Memory Hierarchy
A 25-kHz 3rd-order continuous-time Delta-Sigma modulator using tri-level quantizer
Nondiscrimination and the WTO Agreement on Safeguards
QuAC : Question Answering in Context
Investigation on Hot-Carrier-Induced degradation of STI-nLDMOS with two-step-oxide process for high side application