Instruct: Given the title of a scientific paper, retrieve paper titles that are cited by the given paper.
Query: A switching ringing suppression scheme of SiC MOSFET by Active Gate Drive
SiC MOSFET gate drive design considerations
Investigation of 1.2 kV SiC MOSFETs for hard- and soft-switching converters
Evaluation of SiC MOSFET in Buck converter
A novel gate assisted circuit to reduce switching loss and eliminate shoot-through in SiC half bridge configuration
3.3kV SiC MOSFETs designed for low on-resistance and fast switching
Evaluation of SiC MOSFETs for a high efficiency three-phase buck rectifier
4H-SiC Trench MOSFET With Floating/Grounded Junction Barrier-controlled Gate Structure
A gate drive circuit for silicon carbide JFET
A resonant MOSFET gate driver with efficient energy recovery
Split-Gate 1.2-kV 4H-SiC MOSFET: Analysis and Experimental Validation
High Switching Performance of 1700-V, 50-A SiC Power MOSFET Over Si IGBT/BiMOSFET for Advanced Power Conversion Applications
Impact of common source inductance on switching loss of SiC MOSFET
A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications
A Current Source Gate Driver Achieving Switching Loss Savings and Gate Energy Recovery at 1-MHz
A circuit simulation model for V-groove SiC power MOSFET
Single chip enabled high frequency link based isolated bias supply for silicon carbide MOSFET six-pack power module gate drives
Investigation of 1.2 kV SiC MOSFET for high frequency high power applications
SiC MOSFETs for future motor drive applications
Determination of optimum structure of 4H-SiC Trench MOSFET
A 1-MHz 5-kV Power Supply Applying SiC Diodes and GaN HEMT Cascode MOSFETs in Soft Switching
Protocol design and throughput analysis for multi-user cognitive cooperative systems
spontaneous facial expressions of emotion of congenitally and noncongenitally blind individuals .
Robust Algorithm for Heart Rate (HR) Detection and Heart Rate Variability (HRV) Estimation
Social learning networks: A brief survey
Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence