Instruct: Given a scientific paper title, retrieve paper titles that are cited by the given paper
Query: Class E resonant inverter optimized design for high frequency (MHz) operation using eGaN HEMTs
Demonstration of 13.56-MHz class-E amplifier using a high-Voltage GaN power-HEMT
A 9.5–10.5GHz 60W AlGaN/GaN HEMT for X-band high power application
Design optimization of high breakdown voltage AlGaN-GaN power HEMT on an insulating substrate for R/sub ON/A-V/sub B/ tradeoff characteristics
RLC Matched GaN HEMT Power Amplifier with 2 GHz Bandwidth
Power loss of GaN transistor reverse diodes in a high frequency high voltage resonant rectifier
GaN-Based High-Frequency High-Energy Delivery Transformer Push–Pull Inverter for Ultrasound Pulsing Application
High Efficiency GaN HEMT Power Amplifier/Rectifier Module Design Using Time Reversal Duality
High Power Resonant Inverter with Simultaneous Dual-frequency Output
High-Frequency PWM Buck Converters Using GaN-on-SiC HEMTs
Investigation of Gallium Nitride Devices in High-Frequency LLC Resonant Converters
Design and Optimization of a 380–12 V High-Frequency, High-Current LLC Converter With GaN Devices and Planar Matrix Transformers
Design of Class E resonant rectifiers and diode evaluation for VHF power conversion
Design & development of 45 watt GaN HEMT power amplifier with high speed gate switching for pulsed radar application
Design of GaN-based MHz totem-pole PFC rectifier
Design and development of IGBT resonant inverters for domestic induction heating applications
A broadband high efficiency class AB GaN HEMT balanced power amplifier
A compact 12-watt high-efficiency 2.1-2.7 GHz class-E GaN HEMT power amplifier for base stations
Modulation Scheme for Improved Operation of an RB-IGBT-Based Resonant Inverter Applied to Domestic Induction Heating
High power and high efficiency GaN-HEMT for microwave communication applications
AlGaN/GaN HEMT with over 110 W Output Power for X-Band
Optimal Trajectory Control of Burst Mode for LLC Resonant Converter
Numerical Accuracy Comparison of Two Boundary Conditions Commonly used to Approximate Shear Stress Distributions in Tissue Engineering Scaffolds Cultured under Flow Perfusion
Better Punctuation Prediction with Dynamic Conditional Random Fields
Development, risk, and resilience of transgender youth
AlGaN/GaN HEMTs-an overview of device operation and applications