Instruct: Given the title of a scientific paper, retrieve paper titles that are cited by the given paper.
Query: Normally-off AlGaN/GaN HFET with p-type GaN gate and AlGaN buffer
Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications
Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs
Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency
Self-aligned enhancement-mode AlGaN/GaN HEMTs using 25 keV fluorine ion implantation
OFF-State Degradation of AlGaN/GaN Power HEMTs: Experimental Demonstration of Time-Dependent Drain-Source Breakdown
A Sub-Critical Barrier Thickness Normally-Off AlGaN/GaN MOS-HEMT
InAlGaN/GaN-HEMT device technologies for W-band high-power amplifier
High-Breakdown Enhancement-Mode AlGaN/GaN HEMTs with Integrated Slant Field-Plate
Impact ionization in InAlAs/InGaAs HFET's
AlGaN/GaN current aperture vertical electron transistors
Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs
High breakdown Voltage undoped AlGaN-GaN power HEMT on sapphire substrate and its demonstration for DC-DC converter application
1.8kVAlGaN/GaN HEMTswithHigh-k/Oxide/SiN MISStructure
AlGaN/GaN HEMT with over 110 W Output Power for X-Band
Material and design engineering of (Al)GaN for high-performance avalanche photodiodes and intersubband applications
Design optimization of high breakdown voltage AlGaN-GaN power HEMT on an insulating substrate for R/sub ON/A-V/sub B/ tradeoff characteristics
A 9.5–10.5GHz 60W AlGaN/GaN HEMT for X-band high power application
DC characteristic analysis of AlGaN/GaN HEMT and MOSHEMT
Anomalous Kink Effect in GaN High Electron Mobility Transistors
A 500W Push-Pull AlGaN/GaN HEMT Amplifier for L-Band High Power Application
Adaptive Slope Filtering of Airborne LiDAR Data in Urban Areas for Digital Terrain Model (DTM) Generation
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Scrotal emergencies
Mining Association Rules with Item Constraints
Design optimization of high breakdown voltage AlGaN-GaN power HEMT on an insulating substrate for R/sub ON/A-V/sub B/ tradeoff characteristics