Instruct: Given the title of a scientific paper, retrieve paper titles that are cited by the given paper
Query: Advanced DC-SF Cell Technology for 3-D NAND Flash
Novel 3-dimensional Dual Control-gate with Surrounding Floating-gate (DC-SF) NAND flash cell for 1Tb file storage application
A critical examination of 3D stackable NAND Flash memory architectures by simulation study of the scaling capability
A 45nm 4Gb 3-Dimensional Double-Stacked Multi-Level NAND Flash Memory with Shared Bitline Structure
Comprehensive evaluation of early retention (fast charge loss within a few seconds) characteristics in tube-type 3-D NAND flash memory
A 1Tb 4b/cell 64-stacked-WL 3D NAND flash memory with 12MB/s program throughput
A Multi-Layer Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory
A world's first product of three-dimensional vertical NAND Flash memory and beyond
A Survey of 3 D Nand Flash Memory
Modelling and characterization of NAND flash memory channels
Novel Vertical-Stacked-Array-Transistor (VSAT) for ultra-high-density and cost-effective NAND Flash memory devices and SSD (Solid State Drive)
A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory
Chapter 2 Reliability of 3 D NAND Flash Memories
A floating gate based 3D NAND technology with CMOS under array
Suppression of Read Disturb Fail Caused by Boosting Hot Carrier Injection Effect for 3-D Stack NAND Flash Memories
NAND Flash Memory Revolution
A highly scalable 8-layer 3D vertical-gate (VG) TFT NAND Flash using junction-free buried channel BE-SONOS device
A Bottom-Source Single-Gate Vertical Channel (BS-SGVC) 3D NAND Flash Architecture and Studies of Bottom Source Engineering
Technology for sub-50nm DRAM and NAND flash manufacturing
A Low-Power 64Gb MLC NAND-Flash Memory in 15nm CMOS Technology
Three-Dimensional nand Flash Architecture Design Based on Single-Crystalline STacked ARray
A profound case of linear epidermal nevus in a patient with epidermal nevus syndrome.
Multi-View Picking: Next-best-view Reaching for Improved Grasping in Clutter
a swedish version of the hearing in noise test ( hint ) for measurement of speech recognition .
Disturbless flash memory due to high boost efficiency on BiCS structure and optimal memory film stack for ultra high density storage device
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