Instruct: Given a paper title, retrieve paper titles that are cited by the given paper.
Query: Design of edge termination on non-uniform 100-V super-junction trench power MOSFET
A Novel Charge-Imbalance Termination for Trench Superjunction VDMOS
600V-class Super Junction MOSFET with High Aspect Ratio P/N Columns Structure
A New Solution for Superjunction Lateral Double Diffused MOSFET by Using Deep Drain Diffusion and Field Plates
A New Edge Termination Technique for High-Voltage Devices in 4H-SiC–Multiple-Floating-Zone Junction Termination Extension
Characterization of 1.2 kV SiC super-junction SBD implemented by trench and implantation technique
Process & design impact on BVDSS stability of a shielded gate trench power MOSFET
Improved single-event hardness of trench power MOSFET with a widened split gate
an - 9005 driving and layout design for fast switching super - junction mosfets .
4H-SiC Trench MOSFET With Floating/Grounded Junction Barrier-controlled Gate Structure
Self terminating lateral-vertical hybrid super-junction FET that breaks RDS.A — Charge balance trade-off window
3-D Edge Termination Design and ${R}_{ \mathrm{\scriptscriptstyle ON},\text {sp}}$ -BV Model of A 700-V Triple RESURF LDMOS With N-Type Top Layer
Breakdown voltage instability mechanism and improving ruggedness in Trench Field Plate Power MOSFET
A physically based scalable SPICE model for Shielded-Gate Trench Power MOSFETs
On the Origin of Thermal Runaway in a Trench Power MOSFET
Modeling well edge proximity effect on highly-scaled MOSFETs
Low-Reverse Recovery Charge Superjunction MOSFET With a p-Type Schottky Body Diode
Breakdown Voltage for Superjunction Power Devices With Charge Imbalance: An Analytical Model Valid for Both Punch Through and Non Punch Through Devices
A High-Speed Deep-Trench MOSFET With a Self-Biased Split Gate
The Superjunction Insulated Gate Bipolar Transistor Optimization and Modeling
Determination of optimum structure of 4H-SiC Trench MOSFET
Analyzing open-source and commercial EHR solutions from an international perspective
Increasing the breakdown capability of superjunction power MOSFETs at the edge of the active region
A Comparative Study of Symmetric Key Encryption Algorithms
Design of package BGA pin-out for >25Gb/s high speed SerDes considering PCB via crosstalk
Incremental diversification for very large sets: a streaming-based approach