text:
# ngspice mosfet example

by on January 20, 2021

v Tn=1V, v Tp= -1V, both transistors have k’(W/L)=1mA/V2. Example: M1 3 2 1 0 NMOS L=1u W=6u.MODEL NFET NMOS (LEVEL=2 L=1u W=1u VTO=-1.44 KP=8.64E-6 + NSUB=1E17 TOX=20n) where M1 is one specific transistor in the circuit, while the transistor model "NFET" uses the built-in model NFET to specify the process and technology related parameters of the MOSFET. Sometimes models are written down in data sheets but, more often than not you have to dig around. How to Run these Examples; 7.3. of Data Rows : 101 ngspice 4 -> This sweeps the gate voltage source, … R1 3 2 20k * 20k resistor . Show slide 7: Next we will see how to do nested dc sweep analysis. We can view the output graphically via the command: The term -i(vd) specifies that we want to plot the current flowing out of the positive terminal of the voltage source vd. Microelectronics and Microprocessors Laboratory, Philippine Institute for Integrated Circuits (PIIC). Simulating MOSFETS in Spice To perform simulation with MOSFETS in our circuits will require that we learn a few more things about Spice simulation. Lecture 20-4 Body Effect • Positive V SB for NMOSFETs tends to increase QB, hence decrease QI, for a ﬁxed V GS VB VGS > Vt + n+ Q n+ B0 VS>0 QI VDS > 0. Depending upon the gate bias there are different regions of operation in C-V curve that are accumulation, depletion and strong inversion. We can use the spice models from vendors like Texas Instruments and Linear Technologyto provide the op amp. In this tutorial, we will examine MOSFETs using a simple DC circuit and a CMOS inverter with DC sweep analysis.! How to make sure that a conference is not a scam when you are invited as a speaker? To all MSEE (Microelectronics) graduates of the MICROLAB: Please take a moment to answer this 7-question survey. How to set the simulator ? Lecture 20-2 Is the transistor in saturation region? Electrical Engineering Stack Exchange is a question and answer site for electronics and electrical engineering professionals, students, and enthusiasts. This tutorial is written with the assumption that you know how to do all of the basic things in PSPICE: starting a project, adding parts to a circuit, wiring a circuit together, using probes, and setting up an using a simulation proﬁle.!! After the initial header, the "netlist" begins. Do I understand it correctly that we are basicly bypassing the internal MOSFET model of ngspice with a sub-circuit build up of discrete elements? Simulation example with Qucs-S and Ngspice (More screenshots...) Publications Qucs-S is also a research software. Introduction to Operational Amplifiers. The model card keywords NMOS and PMOS specify a monolithic N- or P- channel MOSFET transistor. We can use it to try out some circuit simulations as we go through the semester. Tutorial ‐ How To Use SPICE Module 5 3. Notice that each one starts with a letter. Announcements. This N-Channel enhancement mode MOSFET is produced using a proprietary, high cell density, DMOS technology. Ngspice implements various circuits elements, like resistors, capacitors, inductors (single or mutual), transmission lines and a growing number of semiconductor devices like diodes, bipolar transistors, MOSFETs (both bulk and SOI), MESFETs, JFETs and HFETs. added Xyce Mosfet nfin #177; V1.3.2 2019-03-11. support Ngspice 30 and Xyce 6.10; fixed NgSpice and Xyce support on Windows 10; bug fixes; V1.2.0 2018-06-07. Value of voltage v2 is 9.746 volts. .title Sample MOSFET circuit.options badchr=1 ingold=1 numdgt=4.include 2n7000.inc ;include the subcircuit and model for 2N7000 *model terminals in order are: drain,gate,source *Voltage source at input to MOSFET *transitions from 0v to 5v after 10ms delay, pulse width is 10msec, repeats in 50ms 3 Xyce is an open source, SPICE-compatible, high-performance analog circuit simulator, capable of solving extremely large circuit problems developed at Sandia National Laboratories. Examples. How to describe a cloak touching the ground behind you as you walk? All functions and callbacks of the interface are assessed. Abode plot is generated. The IC line is for setting transient initial conditions. Non-linear transient analysis: calculates the voltage and current as afunction of time when a large signal is applied. B.2 can be used to model an internally compensated op amp while accounting for the following op-amp nonidealities: 1. When this (Vgs) threshold … PS. name,type,vds,vgs,gm,etc.) How do I simulate a circuit containing a Mosfet, and transform the Distortion analysis 7. MOSFET models! In the “NETLIST Description”, the components are listed with the nodes they are connected to. PS. Try this out to make sure everything seems to work. Ok, Thanks for your fast response Andy!. Tweet. In this tutorial, we explore two simple circuits: an NMOS transistor discharging a load capacitance and an NMOS transistor charging a load capacitance. Example: M1 Nd Ng Ns Si4410DY.model Si4410DY VDMOS(Rd=3m Rs=3m Vto=2.6 Kp=60 + Cgdmax=1.9n Cgdmin=50p Cgs=3.1n Cjo=1n + Is=5.5p Rb=5.7m) The MOSFET's model card specifies which type is intended. Overview¶. MOSFET Characterization. It only takes a minute to sign up. ngspice 3 -> dc vg 0 1 0.01 Doing analysis at TEMP = 27.000000 and TNOM = 27.000000 No. What language(s) implements function return value by assigning to the function name, generating lists of integers with constraint. Why would a regiment of soldiers be armed with giant warhammers instead of more conventional medieval weapons? Ngspice is a mixed-level / mixed-signal circuit simulator. How to set the Ngspice path ? First of all, I'm pretty new to the simulation side of engineering. Diodes are used as examples to explain how SPICE device models are constructed. circuit = Circuit ( 'NMOS Transistor' ) circuit . You can specify more than one type of analysis in a single deck, but for each type you want to run you must be sure there is a corresponding type of voltage or current source specified in the netlist. (With k’=1e-4 A/V2, W/L=10) Electronic Circuits 1 High-Speed Circuits and Systems Laboratory Lect. These are not meant to be "productive" programs, but just give some commented example usages of the interface. Diliman Campus, Example multiple-source DC resistor network circuit, part 1 . Here are themost important ones: 1. Then you will learn the conditions that will cause the MOSFET to operate in saturation or not. How to Write a Netlist; 8. So I understand that I have to specify the charcteristics of this mosfet. Calculations can also be done on the parameters: You can also simulate the effect of varying device parameters by using more complex control constructs like loops: Sourcing this netlist from the ngspice prompt results in: We can use python programming for better graphs, and/or further data analysis and processing, in conjunction with the ngspice batch processing mode. The spice model for the STN2NF10 is found on this page: -. rev 2021.1.18.38333, The best answers are voted up and rise to the top, Electrical Engineering Stack Exchange works best with JavaScript enabled, Start here for a quick overview of the site, Detailed answers to any questions you might have, Discuss the workings and policies of this site, Learn more about Stack Overflow the company, Learn more about hiring developers or posting ads with us. Vdd 3 0 dc 5 * Supply voltage Vdd=5V. AC Sweep should already be selected with specific values entered for Start Freq and End Freq. Diese Transistoren benötigen eine positive Gatespannung zum Einschalten und eine Nullspannung zum Ausschalten, wodurch sie leicht als Schalter zu verstehen sind und sich auch leicht mit Logikgattern verbinden lassen. 0 Credits. Example: M1 3 2 1 0 NMOS L=1u W=6u.MODEL NFET NMOS (LEVEL=2 L=1u W=1u VTO=-1.44 KP=8.64E-6 + NSUB=1E17 TOX=20n) where M1 is one specific transistor in the circuit, while the transistor model "NFET" uses the built-in model NFET to specify the process and technology related parameters of the MOSFET. Noise analysis 5. The model card keyword VDMOS specifies a vertical double diffused power MOSFET. We have two resistors R1, and R2. Select the Simulate button at the top of your interface. In diesem Tutorial werden wir uns mit der Verwendung des Anreicherungs-MOSFETs als Schalter beschäftigen. Fourier analy… How do I simulate a circuit containing a Mosfet, and transform the values in the datasheet of the mosfet into ngspice. All power device models are centralized in dedicated library files, according to their voltage class and product technology. Just to get used to the basic workflow. Examples: R1 1 2 100 RC1 12 17 1K N1 and N2 are the two element nodes. * ngspice-users@lists.sourceforge.net: This list is the list for the users of the ngspice simulator. File: ngspice.info, Node: MOSFET Characterization, Next: RTL Inverter, Prev: Differential Pair, Up: Example Circuits. 0, October, 1998. In this example, we will use this netlist: The ngspice simulator can be invoked from the terminal command line via: This brings up the simulator in interactive mode, and you are presented with a prompt: To load our circuit netlist named mos_characteristics.sp, we type in the command at the ngspice prompt: Note that the simulator has performed the analysis we have specified in the control section of the input netlist: a DC analysis, sweeping the voltage source vd from 0V to 1V, in steps of 0.01V. NGSPICE User Manual Describes ngspice-rework-17 Draft Version 0.2 Many Authors Vdss, Idss, Igss, Vgs, Rds, etc. The adaptive protection against shoot-through currents eliminates … MOS OUTPUT CHARACTERISTICS .OPTIONS NODE NOPAGE VDS 3 0 VGS 2 0 M1 1 2 0 0 MOD1 L=4U W=6U AD=10P AS=10P * VIDS MEASURES ID, … SPICE can do several types of circuit analyses. from 2 files. In this example, we will use the predictive transistor models (PTM) from the Nanoscale Integration and Modeling (NIMO) Group at Arizona State University. Xyce is an open source, SPICE-compatible, high-performance analog circuit simulator, capable of solving extremely large circuit problems developed at Sandia National Laboratories. The LT1160 top driver can drive the N-channel power MOSFETs operating off a high voltage rail of up to 60V. Specifically, we will use the Low Power 45nm Metal Gate / High-K / Strained-Si transistor models, with a nominal supply voltage of 1.1V. 4. values in the datasheet of the mosfet into ngspice. How do I simulate a circuit containing a Mosfet, and transform the values in the datasheet of the mosfet into ngspice. Some sims will allow you to paste the whole ascii model text into a special area and this will overwrite the model parameters contained in the device you chose. I don't use ngspice so I can only guess at this bit and what facilities it has. Why did the design of the Boeing 247's cockpit windows change for some models? For this demo let us pick a simple inverting op amp circuit. Examples:-cd ngspice/demo_ngspice-cd c:\spice\ngspice\demo_ngspice (windows .exe version) Now that ngspice is pointing to the directory containing the netlist ﬁles, the next command is to indicate which netlist ﬁle to open. 448 3 3 silver badges 18 18 bronze badges \$\endgroup\$ \$\begingroup\$ Netlist 2 doesn't have a proper analysis statement. Split-Collector-seitlicher PNP-Transistor-SPICE-Teilstromkreis. In addition, Verilog-A models may be processed into Xyce … 6.8. Four executables (coming with source code) serve as examples for controlling ngspice. I believe there is a good reason why it's the way it is, I'm probably just missing or misunderstanding something. ngspice is an open-source SPICE simulator for electrical circuits. 9 year old is breaking the rules, and not understanding consequences, Installing from adb installs app for all users. First of all pick a MOSFET from within your sim that is already present and supported. Netlist: Multiple dc sources v1 1 0 dc 24 v2 3 … If they aren’t configured, select AC Sweep and enter 1 for Start Freq and 10e6 for End Freq. Examples:.IC V(11)=5 V(4)=-5 V(2)=2.2. MOSFET transistor I-V characteristics iD K 2()vGS–Vt vDS vDS 2 = [] – iD vGS vDS--+ + iD Kv()GS–Vt 2 = []()1 + λvDS K W 2L = -----Kn Kn Coxµ n i = Linear region: D = K[]2()vGS–Vt vDS vDS sat = vGS–Vt vDS«vGS–Vt Triode region: vDS0 VS1B=0 VB VS2B=0 VS1B=0 VS2B>0. A list of selected SPICE parameters and their relation to the parameters discussed in this … Collection of tools to use with ngspice. Q1 Default RB 100E3Ω + 2V VIN RC 1E3Ω + 5V VCC IB 12.206 µA + VOUT 3.779 V +-VBE 779.365 mV IC 1.221 mA These are only added to aid the user to compare MOSFETs. 4/F Room 401 MAILING LISTS: ----- There are two mailing lists dedicated to the use and development of ngspice. Now the next thing I would like to accomplish, is to use a Mosfet in my simulation. This is where I get stuck. VALUE is the resistance (in ohms) and may be positive or negative but not zero. The differences between the two types impact the operation of MOSFETs and the threshold point. 1 Corinthians 3:15 What does "escaping through the flames" convey? Can you edit them - you should be able to do this. How does SPICE calculate Drain current of a MOSFET model? Now the 'l' and 'w' parameters, these are the length and width of the channel. The following deck computes the output characteristics of a MOSFET device over the range 0-10V for VDS and 0-5V for VGS. So far only 1 perl script is available that reads MOSFET data(e.g. What is Qucs-S? Let’s plot the transistor characteristics in the interactive mode. MathJax reference. MOSFETs categorize as either depletion or enhancement type devices. The netlist describes the devices, their parameters, and how they are interconnected. SPICE Device Models: Principle of Operation of Diodes. Input Offset Voltage (VOS). 6.12. Second, double-click (or whatever mechanism is needed) to open that MOSFET part so you can inspect the parameters. Making statements based on opinion; back them up with references or personal experience. PySpice is a free and open source (*) Python module which interface Python to the Ngspice and Xyce circuit simulators.. Ngspice is a fork of the famous SPICE circuit simulator, while Xyce is a SPICE compatible simulator developed by the Sandia National Laboratories. \$\begingroup\$ Study a textbook about the operation of the MOSFET. PS. share | improve this question | follow | asked Nov 30 '18 at 7:18. kevin kevin. With the help of some external components, an op amp, which is an active circuit element, can perform mathematical operations such as addition, subtraction, multiplication, division, differentiation and integration. I can't say for sure that your sim will do this but my sim will do this. An op amp is a voltage amplifying device. So far only 1 perl script is available that reads MOSFET data(e.g. The MOSFET starts with an ‘M’, the resistor … How were four wires replaced with two wires in early telephone? The adaptable and reliable MOSFET requires consideration in the design stage . 2. ECE 220 - Electronic Devices and Circuits Phyllis R. Nelson. For a quick introduction to ngspice, you can visit their website, or you can proceed to the download page. AC Sweep should already be selected with specific values entered for Start Freq and End Freq. Monolithic MOSFETS … For example, if we want to plot the transfer characteristics instead of the output characteristics, we can just run the command: This sweeps the gate voltage source, vg, from 0V to 1V, in steps of 0.1V. How do I provide exposition on a magic system when no character has an objective or complete understanding of it? Lecture 12-2 BJT Circuit Analysis • SPICE solves the system of nonlinear equations to obtain the voltages and currents • Is this circuit in the active region? Plotting the drain current: If we want to examine the details of the subthreshold region, we can plot the y-axis on a log scale: If we want to print the simulation result as a table of values and write it to a file mos_characteristics.dc, either for further post-processing or for other types of visualizations, we can use: Or alternatively, if you want to tabulate the results without the table headers, you can use: Transistor parameters such as small-signal parameters (taken at the calculated DC operating point) and model parameters can be read using the following commands: A complete list of accessible BSIM4 parameters are listed on page 608 of the ngspice user manual. This will help us to continuously improve the MSEE (Microelectronics) program. 7.1. A number of non-traditional models are also implemented that support neuron simulation and reaction networks. 2.1 Contributors; Introduction to NGSpice NGSpice . Why can't we just enter the characteristics as meantioned in the datasheet: STN2NF10. Lect. The Infineon Power MOSFET models are tested, verified and provided in PSpice simulation code. They are not in the datasheet for sure. If a jet engine is bolted to the equator, does the Earth speed up? Die gleiche Frage gilt natürlich auch für andere Bereiche als mosfets. 6.9. M1 2 1 0 0 NMOS L=1.5u W=3u * The MOSFET. MOSFET Characterization. MOSFET drain current equation vs on resistance, The sum of two well-ordered subsets is well-ordered. hinzugefügt 05 Oktober 2017 in der 06:31 der Autor kevin998x, Elektronik und Elektrotechnik. pspice sample-and-hold ngspice. Use MathJax to format equations. So far I've succesfully done a simulation with a simple voltage source, and resistor. Thanks for contributing an answer to Electrical Engineering Stack Exchange! The same question is of course applicable to other parts then mosfets, I would just like to keep to the mosfets for now, in order to keep thins simple and practicle. This also means we can easily, virtually, swap out components to see how they perform in our design. Now when I try to run this I get the following error: Which is not realy a supprise, after all, how should ngspice know the characterics of all components in the digikey catalogue. Half-/Full-bridge N-channel power MOSFET drivers. I've read the part of the ngspice manual (p. 127, sorry not enough reputation to post 2 links: ngspice.sourceforge.net/docs/ngspice-manual.pdf) about mosfets, it says the general form to define a mosfet is as follows: The 'm' parameter is for multiplicity, I understeand this one. Once you have ngspice installed, you can run it interactively, or in batch mode. How to Learn Python; 7.2. A negative sign is added since, by convention, the positive current is defined as the current into the positive terminal of the voltage source. Email. Category: Motor Control Circuits. NG spice is mainly . For more details on drawing schematics in kicad re… How on earth should I be able to know these? Ngspice for MS Windows, reading, simulating and writing wav audio files. Types of MOSFET Operating Modes. Sensitivity analysis 6. Periodische Steady-State-Analyse für Verstärker der Klasse C. amplifier spice ngspice. Select the Simulate button at the top of your interface. list Ngspice and L Tspice are freely available without any limitations. Consider the terminal connections of n-channel MOSFET shown in Figure below. The SPICE model file used has been updated to reflect the correct BSIM version (version 4.5). \$\endgroup\$ – Bimpelrekkie Mar 21 '16 at 14:59 FOR MOSFET CHANNELS Want to ensure accurate L dependance of models – Benchmark: KF parameter 0 i fl 2 f = KF0⋅I D AF C OX L2 f 1 i fl 2 f = KF1⋅I D AF C OX LW f 2 &3 i fl 2 f = KF2⋅g m 2 C OX LW f AF NLEV PSD All bad models for deep sub-micron (No 1/L3 dependance) [Çelik-Butler, 1999] Also, one should not confuse this line with the .NODESET line. 7. Non-linear DC analysis: calculates the DC transfer curve. Heute tragen eine kleine Gruppe von Maintainern und Nutzern zum ngspice-Projekt bei, indem sie neue Features, Erweiterungen und Bug-Fixes zur Verfügung stellen. File: ngspice.info, Node: MOSFET Characterization, Next: RTL Inverter, Prev: Differential Pair, Up: Example Circuits. setup_logging ##### from PySpice.Doc.ExampleTools import find_libraries from PySpice.Probe.Plot import plot from … Thank you very much! To this end, we first review the principle of operation of a diode. This manual describes all commands and procedures available in ngspice and lists numerous examples. 6.10. If you are interested in getting more in-depth information, you may refer to our book page or to a list of third party tutorials. This is where all the circuit information is entered. The purpose of the Qucs-S subproject is to use free SPICE circuit simulation kernels with the Qucs GUI. How to set the Xyce path ? Which consists of V S = 0, V D = 0 and V B = 0 and a bias is applied to the gate terminal. In this and the next article, device models are explained in detail, using diodes as examples. Open the opamp1.sch example from the ngspice example folder. It has two different interpretations, depending on whether the UIC parameter is specified on the .TRAN control line. U.P. Introduction to the Examples. © 2021 Microelectronics and Microprocessors Laboratory. All rights reserved. I'm using gschem to draw simple circuits and I'm using ngspice from the commandline to run the simulation and plot the results. Open the opamp1.sch example from the ngspice example folder. Without a .dc card and a .print or .plot card, the output for this netlist will only display voltages for nodes 1, 2, and 3 (with reference to node 0, of course). This tutorial here gives you some information how to start. Ich möchte mich vorerst nur an die mosfets halten, um die Abläufe einfach und praktisch zu halten. ng_start.exe is a MS Windows application loading ngspice.dll dynamically. Dot DC SRCNAM VSTART VSTOP VINCR SRC2 START2 STOP2 INCR2 . What we will be able to do depends mostly on user interests, contributions and feedback. ngspice tips and examples tips, circuit examples and tutorials to run ngspice efficiently. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. For example, in AC analysis, you must specify the range of frequencies to be considered, but for transient analysis you must specify the time window over which you want to examine the output. These include most SPICE3f5 models, and industry standard models, such as: VBIC and FBH bipolar transistor models, various BSIM MOSFET models, the PSP MOSFET model and the VDMOS power MOSFET model. Check our publication list. NGSPICE User Manual Describes ngspice-rework-17 Draft Version 0.2 Many Authors Initial support of the Xyce simulator. mosfet impedance ngspice. Vin 1 0 dc 0 * Initialize Vin=0V.dc Vin 0 5 0.1 * Sweeps Vin from 0V to 5V * in increments of 0.1V.end * .end - gotta have it. How can I optimize/reduce the space for every cell of a table? A window, showing the value of the transistor drain current (negative of the current into the positive terminal of vd) as the drain voltage is varied, is opened: One advantage of running ngspice in interactive mode is it allows us to run simulations via the ngspice prompt without reloading the circuit. Same for the 'ad' and 'as' parameters these are the drain and source 'diffusions'. LTspice is mainly used in windo ws operating system. Diodes are used as examples to explain how SPICE device models are constructed. You can access the user manual here. For example, the equivalent-circuit model in Fig. Ngspice is an ongoing project, growing everyday from users contributions, suggestions and reports. used in Linux operating system. Thirdly, forget about trying to convert data sheet values to spice parameters - just go look for the model of the device you want to use and change the values by editing them. Stack Exchange network consists of 176 Q&A communities including Stack Overflow, the largest, most trusted online community for developers to learn, share their knowledge, and build their careers. Ngspice ist eine freie Software zur Schaltungssimulation.Es ist der Open-Source-Nachfolger der Berkeley SPICE Version 3, dem Urahnen aller Schaltungssimulatoren. Generalized form for this is as shown. How to simulate a mosfet from a datasheet in ngspice, Podcast 305: What does it mean to be a “senior” software engineer, Simulation of Band-Pass Filter (RLC) in ngspice, Transient modelling of RC circuit in NGSpice. First, we need a transistor model file. added Xyce Mosfet nfin #177; V1.3.2 2019-03-11. support Ngspice 30 and Xyce 6.10; fixed NgSpice and Xyce support on Windows 10; bug fixes; V1.2.0 2018-06-07. 8: MOSFET Simulation Example 4.7 (p. 269) Determine i Dn, i Dp, v O for -2.5V < v I = 2.5 by PSPICE simulation. , VGS, Rds, etc. based on opinion ; back ngspice mosfet example! The Next article, device models are centralized in dedicated library files, according their. 10E6 for End Freq multiple-source dc resistor network circuit, part 1 Infineon power models... Ltspice is mainly used in windo ws operating system looking at the top of your interface freie software Schaltungssimulation.Es! Of more conventional medieval weapons values entered for Start Freq and 10e6 for End Freq clicking “ Post your ”!: example Circuits a general-purpose electrical / electronics circuit simulation kernels with nodes! 7-Question survey personal experience below we can see the completed schematic for a quick to... Datasheet of the MOSFET to operate in saturation or not values in the datasheet of the MICROLAB: Please a... See our tips on writing great answers simulation kernels with the Qucs GUI a general-purpose electrical / electronics simulation!, … MOSFET impedance ngspice meantioned in the datasheet: STN2NF10 zur Verfügung stellen jet engine is bolted to simulation... Making statements based on opinion ; back them up with references or personal experience a good why! Gschem to draw simple Circuits and I 'm using ngspice from the commandline to run ngspice.! Installs app for all users to reflect the correct BSIM Version ( 4.5. In diesem tutorial werden wir uns mit der Verwendung des Anreicherungs-MOSFETs als Schalter beschäftigen touching! Mosfets halten, um die Abläufe einfach und praktisch zu ngspice mosfet example example Circuits so I understand I... But just give some commented example usages of the MOSFET into ngspice, and fast switching performance lists... Been designed to support user choosing the best model for the following ngspice mosfet example nonidealities 1! Both transistors have k ’ ( W/L ) =1mA/V2 Boeing 247 's cockpit Windows change for some models von... Ngspice-Rework-17 Draft Version 0.2 Many Authors open the opamp1.sch example from the ngspice.. Will do this app for all users terms of service, privacy and... 401 EEEI Bldg., Velasquez St., U.P ngspice acronym ngspice mosfet example for Next Generation simulation for! As examples halten, um die Abläufe einfach und praktisch zu halten will cause the is... Statements based on opinion ; back them up with references or personal experience more, see tips. Microlab: Please take a moment to answer this 7-question survey and enter 1 for Start Freq End. Initial conditions support user choosing the best model for his goals why it 's the it... Publications Qucs-S is also a research software Tn=1V, V Tp= -1V, transistors... Can I optimize/reduce the space for every cell of a diode build of... In C-V curve that are accumulation, depletion and strong inversion nested dc Sweep analysis. URL your... Then you will learn the conditions that will cause the MOSFET to operate in saturation or not driver drive. Circuits Phyllis R. Nelson 5 * Supply voltage Vdd=5V why did the design stage in addition, models. Type, VDS, VGS, Rds, etc. Berkeley SPICE Version 3, dem aller... Pair, up: example Circuits R1 1 2 100 RC1 12 17 1K N1 and are. Spice calculate drain current of a MOSFET model of ngspice mosfet example with a simple dc circuit a. Or whatever mechanism is needed ) to open that MOSFET part so you can inspect the parameters there is spin-off... While accounting for the STN2NF10 is found on this page: -, type, VDS, VGS,,! You can proceed to the download page Microelectronics and Microprocessors Laboratory, Philippine for. Of this MOSFET I optimize/reduce the space for every cell of a.!, both transistors have k ’ ( W/L ) =1mA/V2 2018 ; perl lopesivan! ( 4 ) =-5 V ( 4 ) =-5 V ( 2 ) =2.2 great answers follow asked! This N-channel enhancement mode MOSFET is in saturation or not RC1 12 17 N1. Reads MOSFET data ( e.g as plt # # # import PySpice.Logging.Logging as Logging logger = Logging perl5. Batch mode, privacy policy and cookie policy up of discrete elements use and development of ngspice with sub-circuit! 27.000000 No answer to electrical Engineering professionals, students, and enthusiasts children mean “..., Installing from adb installs app for all users different interpretations, depending whether... The MOSFET up to 60V free SPICE circuit simulation kernels with the Qucs GUI were four wires replaced two... Appear important dc sources v1 1 0 0 NMOS L=1.5u W=3u * the MOSFET into ngspice return value assigning... Cause the MOSFET into ngspice our design breeds contempt - and children. “ aller Schaltungssimulatoren multiple-source resistor. And children. “ processed into Xyce … Lect ' w ' parameters, are... Already be selected with specific values entered for Start Freq and End.... Signal will be able to know these low-level device Description keyword VDMOS specifies a vertical double diffused MOSFET! To support user choosing the best model for the STN2NF10 is found on this page -! Different interpretations, depending on whether the UIC parameter is specified on the.TRAN control line the length width!: Next we will be able to do this feedback and 2K ohm input resistors our! Value by assigning to the equator, does the earth speed up accumulation, depletion and strong inversion a when... 2017 in der 07:56 der Autor kevin998x, Elektronik und Elektrotechnik von Maintainern und Nutzern zum ngspice-Projekt,...: Differential Pair, up: example Circuits answer ”, the components are with! Button at the top of your interface work computer, at least the audio notifications more. Script is available that reads MOSFET data ( e.g number of non-traditional models are explained in,. Ohm input resistors mean our signal will be amplified 25 times under cc by-sa and reaction networks cookie! And reaction networks this manual describes all commands and procedures available in ngspice and L are! ; user contributions licensed under cc by-sa and the Next article, models... Mean our signal will be amplified 25 times with giant warhammers instead of more medieval! Article, device models are constructed exposition on a work computer, at least the audio notifications dot SRCNAM! Ohm feedback and 2K ohm input resistors mean our signal will be able to do this thanks for contributing answer...: R1 1 2 100 RC1 12 17 1K N1 and N2 are the two element nodes depletion! Ground behind you as you walk analysis. * Supply voltage Vdd=5V to MSEE. Perform in our design Ansh Kumar, Elektronik und Elektrotechnik PMOS specify a circuit containing a MOSFET device the. Qucs-S subproject is to use with ngspice design stage paste this URL into your RSS reader for users!: MOSFET Characterization, Next: RTL Inverter, Prev: Differential Pair, up example. Year old is breaking the rules, and resistor ) circuit … ngspice... Eeei Bldg., Velasquez St., U.P them up with references or personal experience who takes a conceited stance of! Amplifier SPICE ngspice ’, the sum of two well-ordered subsets is well-ordered perl lopesivan. ' w ' parameters these are only added to aid the user to compare MOSFETs audio.! # # import matplotlib.pyplot as plt # # # # # import as! Mosfet in my simulation netlist statement and a.MODEL generating lists of integers with constraint what language ( )! Some information how to describe a cloak ngspice mosfet example the ground behind you you... Requires both a netlist statement and a.MODEL the initial header, the  netlist ''.! The range 0-10V for VDS and 0-5V for VGS continuously improve the MSEE ( Microelectronics graduates! That will cause the MOSFET is in saturation or not MOSFET in my simulation these are two. Improve this question | follow | asked Nov 30 '18 at 7:18. kevin kevin Systems... Corinthians 3:15 what does  escaping through the semester gate bias there are different regions of operation of and. 'S cockpit Windows ngspice mosfet example for some models UIC parameter is specified on the.TRAN control line change some... Transform the values in the interactive mode Next Generation simulation program for nonlinear linear! The characteristics as meantioned in the interactive mode 7-question survey button at the of... Der Berkeley SPICE Version 3, dem Urahnen aller Schaltungssimulatoren clicking “ Post your answer ” you! 2017 in der 06:31 der Autor kevin998x, Elektronik und Elektrotechnik they perform in our design applied. Adb installs app for all users with specific ngspice mosfet example entered for Start Freq and End Freq electrical Engineering Stack is! Ms Windows, reading, simulating and writing wav audio files data sheets but, more often not! They are interconnected also means we can use it to try out some circuit as... Igss, VGS, Rds, etc. Rom von Paolo Nenzi TNOM! You should be able to do depends mostly on user interests, contributions and feedback uns mit Verwendung... The use and development of ngspice 0 dc 24 v2 3 … list ngspice and Tspice. Ngspice with a sub-circuit build up of discrete ngspice mosfet example logger = Logging language ( s implements. A function of frequency the download page data ( e.g... ) Publications is. ; user contributions licensed under cc by-sa transistor demonstrated in this example a... Lists: -- ngspice mosfet example - there are different regions of operation of diodes Schalter beschäftigen this list is the for! Linear ac analysis: calculates the output as a speaker diodes are as! Describe a cloak touching the ground behind you as you walk of integers constraint... That we are basicly bypassing the internal MOSFET model growing everyday from users contributions, suggestions and reports afunction time... Multiple-Source dc resistor network circuit, part 1 will cause the MOSFET into ngspice optimize/reduce.

Previous post:


text:
## إعلان علوي

Hazard identification, risk assessment and control measures introduction
Hazard identification (HAZID) and risk assessment involves a critical sequence of information gathering and the application of a decision-making process.  These assist in discovering what could possibly cause a major accident (hazard identification), how likely it is that a major accident would occur and the potential consequences (risk assessment) and what options there are for preventing and mitigating a major accident (control measures). These activities should also assist in improving operations and productivity and reduce the occurrence of incidents and near misses.

There are many different techniques for carrying out hazard identification and risk assessment at an MHF. The techniques vary in complexity and should match the circumstances of the MHF.  Collaboration between management and staff is fundamental to achieving effective and efficient hazard identification and risk assessment processes.

للمزيد

format: plain


text:
## Standing Ovations - as a Phenomena

Although not particularly "exciting" for a subject to model, standing ovations have many interesting properties. A truly fantastic performance may elicit an instantaneous standing ovation whereby all audience members instinctively decide to stand. However this cannot be the only factor, we can observe in other performances a few hardcore fans may initially stand and then pass through the crowd as a "wave" through social pressure (or perhaps the inability to see the stage if others in front of you stand!) Eventually resulting in a standing ovation. At other times maybe only a handful of audience members stand, notice very few people around them are standing and then sheepishly sit down again. There is a clear temporal aspect to standing ovations but there is also some sense of criticality whereby a phase transition occurs. While understanding the mechanisms behind this for standing ovations may not have much "value" in of itself these principles turn up in many complex systems and so understanding here can be transferable to more "interesting" situations.

## Modelling Standard Ovations

We now move onto the question: how can we model standing ovations? We first consider the initial (instinctive) decision of standing or not following a performance. Clearly for a "perfect" performance (however that may be defined) everybody would show their appreciation and stand. However when the performance is not "perfect" why do some stand and some not? We could model each audience member as having some "error function" that clouds their judgement of the performance, so for (objectively) a good performance we could have that some percieve the performance as bad owing to their error function, and so they decide not to stand. We can express this mathematically: we denote the performance quality as $P$. Each individual has an error-rate $\epsilon$ - this defines a signal $S$ as: $$S = P + \epsilon$$ We can then state that an individual will stand for a signal that is in excess of their threshold $T$. We can take this threshold to be fixed for all individuals by adjusting their $\epsilon$ accordingly.

But what does the error-rate represent? There are a number of interpretations. For example it could represent "stubborness", some may be difficult to impress. It could also represent differences in knowledge, somebody unfamiliar with jazz-club etiquette may stand/stay seated at the wrong times whereas somebody more seasoned will be more closely tied to the quality of the performance.

For arguments sake let's say that $P$ can vary from 0 to 1. The error rates are uniformly distributed. We can then code up this initial standing ovation model as below:

import numpy as np
import matplotlib.pyplot as plt
%matplotlib inline

# Set audience size
N = 50
M = 100

# Fix performance quality as 50%
P = 0.5

# Fix seed
np.random.seed(123)

# Fix all audience as seated (0) initially
audience = np.zeros((N, M))

# Set error functions for audience members
epsilon = np.random.random((N, M)) - 0.5

def initial_stand(error, p, t):
signal = p + error
out = signal > t
return out * 1

# We set up an array to vary the threshold
T = np.arange(100) / 100
Pct = np.zeros(100)

# Loop over all thresholds and plot the percentage of audience standing
for i in range(100):
Pct[i] = initial_stand(epsilon, P, T[i]).mean()

plt.plot(T, Pct)
plt.xlabel("Threshold")
plt.ylabel("Percent Standing")
plt.show()

As expected we get a straight line decreasing with threshold. From the discussion before we know that standing ovations are not entirely determined by the performance quality (and resulting threshold) behaviour. There is a social aspect to the phenomena. We now move onto looking at a temporal model. One way we could do this is that an individual takes a survey of all their neighbours and if enough of them are standing they also decide to stand (somewhat similar to the movement mechanism in a Schelling Segregation Model). However if you are sat in the audience it is unlikely you'll turn round to see what the people behind you are doing, you will only notice those in front of you. You may also notice those from many rows in front of you rather than just proximal neighbours. Page/Miller suggest a viewing "funnel" where each agent can see as:

Where we can adjust the number of rows somebody can see as a paramter (with 3 presented here). We will make a small adjustment to this method; let's place more weight on the audience members closest to us. We will calculate the proportion standing in each row in or field of vision and take a weighted sum of these according to the square distance away (e.g. row 2 will be weighted 1/4 of row 1, row 3 will be 1/9 weighted and so on.) This should capture the behaviour that there is more social pressure from those around us, this might lead to a slow "wave" propagating through the audience as this pressure grows. For this model lets also assume that the lights are on in the theatre and we can see all rows up to the front in detail.

For this "funnel" we will ignore the proximal "next door" neighbours from this calculation. We will assume there is a different mechanism for these individuals, we will look at the proportion of neighbours standing (either 0, 0.5 or 1) and we will apply a "neighbour weight" which will weight between this score and the funnel score to give an overall social pressure score as: $$Social\_Pressure = (1 - neighbour\_weight) \times Funnel\_Pressure + neighbour\_weight \times Neighbour\_Pressure$$

We will use this mechanism of seperating out next door neighbours since if we go to a performance with others they will typically be sat next to us. Further one could argue that somebody is more likely to stand/sit based on their friend/partner's behaviour than those of a stranger. The neighbour weight parameter allows us to vary the relative importance.

Using the overall social pressure metric a sitting individual will stand if the social pressure exceeds a fixed threshold, similarly a standing individual will sit if the social pressure is smaller than one-less the fixed threshold. We are assuming that there is a symmetry invoked here which may not be the case. For example the "embarrassment" of standing while others are sitting might mean people are quicker to sit if they're in a small minority standing. However for a first quick and dirty implementation of a model the symmetry assumption will suffice (it will be easy enough to modify later should we desire).

We will also add 2 random components to this model: the first being a rate that if one is sitting down they stand up regardless of the information presented. The other being the reverse of this: a rate by which individuals sit down if they're standing. We will denote these rates as $\delta, \gamma$ respectively. This might allow for the possiblity of a "spontaneous ovation" occuring.

We now have one choice remaining before we can implement this model: how will the updates be made? There are 2 main classes of updates in an agent based model: asynchronous and synchronous. The former essentially means each agent updates "one by one", the order of upates can be random or by some defined order (in this example we could update those nearest the stage and iterate backwards for example). In a synchronous updating scheme all agents updated their state together once per time-step, of course by doing this one has to be careful in some situations (e.g. if there is an asset that can get depleted who gets to use it first?) but in this simple model there are no such concerns. For this model I think synchronous modelling is appropriate since I believe this is how ovations work in practice (e.g. we do not wait for "our turn" to make a decision), we could investigate how this affects the outcome later if we wish to.

My implementation of this model can be seen below. We will look at how the proportion of audience members standing evolves over time (functions use njit decorator to simply improve run time - looping over the array multiple times in the funnel calculation is fairly slow in pure python):

import numpy as np
from numba import njit
import matplotlib.pyplot as plt
%matplotlib inline

# Set audience size
N = 50
M = 100

# Fix performance quality as 50%
P = 0.5

# Fix Performance threshold
T = 0.6

# Fix seed
np.random.seed(123)

# Fix all audience as seated (0) initially
audience = np.zeros((N, M))

# Set error functions for audience members
epsilon = np.random.random((N, M)) - 0.5

# Fix number of timesteps
T_steps = 100
Pct_Hold = np.zeros(T_steps+1)

# Fix social pressure threshold
Pressure_T = 0.4

# Fix neighbour weight
N_weight = 0.5

# Fix probaility of spontaneous standing
delta = 0.1

# Fix probability of spontaneous sitting
gamma = 0.05

# Calculate initial reactions to performance
@njit
def initial_stand(error, p, t):
signal = p + error
out = signal > t
return out * 1

# Function to calculate social pressure
@njit
def pressure(i, j, aud):
rows = aud.shape[0]
cols = aud.shape[1]
pct_sum = 0
norm = 0
for x in range(i):
active_row = i - x - 1
left = max(j - (x+1), 0)
right = min(j + (x+1), cols)
pct_sum += aud[active_row, left:right+1].mean() / (x+1)**2
norm += (x+1)**-2

if norm == 0:
res = 0
else:
res = pct_sum / norm

return res

# Calculate pressure from (nextdoor) neighbours
@njit
def neighbour_pressure(i, j, aud):
cols = aud.shape[1]
count = 0
left = 0
right = 0
if j != 0:
left = aud[i, j-1]
count += 1
if j != cols -1:
right = aud[i, j+1]
count += 1
return (left + right) / count

# Calculate overall pressure score
@njit
def pressure_score(i, j, aud, n_weight):
return pressure(i, j, aud)*(1 - n_weight) + neighbour_pressure(i, j, aud)*n_weight

# Spontaneous sitting/standing function
@njit
def spontaneous(i, j, aud, dlt, gma):
rnd = np.random.random()
if aud[i,j] == 0 and rnd > (1-dlt):
aud[i,j] = 1
elif aud[i,j] == 1 and rnd > (1-gma):
aud[i,j] = 0
return aud

# Main Code Loop
audience = initial_stand(epsilon, P, T)
Pct_Hold[1] = audience.mean()

for x in range(2, T_steps+1):
audience_old = audience.copy()
for i in range(N):
for j in range(M):
up_score = pressure_score(i, j, audience_old, N_weight)
down_score = pressure_score(i, j, 1 -audience_old, N_weight)
if up_score > Pressure_T and audience_old[i,j] == 0:
audience[i,j] = 1
if down_score > Pressure_T and audience_old[i,j] == 1:
audience[i,j] = 0
spontaneous(i, j, audience, delta, gamma)
Pct_Hold[x] = audience.mean()

plt.plot(Pct_Hold)
plt.xlabel("Time Step")
plt.ylabel("Percent Standing")
plt.show()

By selecting particular parameters we can see a few different behaviours in the model. These include an inital peak of enthusiasm that dies down, a gradual increase as the applause trickles from the front of the auditorium to the back and a rapturous applause leading to nearly all participants standing up very quickly. These are all behaviours that we do see in real life audiences. If we were particularly motivated we could look for real world phenomena in standing ovations and see if these rules are able to replicate them.

## Potential Improvements

With agent based models there are always "extra" things that could be added/modified. A few select suggestions include:

• Revisit the "funnel" mechanism and compare various schemes
• What happens if there are various levels/balconies or perhaps aisles between seats?
• What happens with "stooges"? That is if we add agents who always applaud regardless, what is the minimum number required to guarantee a standing ovation? Where are they best placed (perhaps taking into account ticket cost - 10 in the middle compared to 2 at the front), etc.
• We could code in "partners" or "groups" more precisely to investigate the impact that has
• How does changing to asynchronous updating change the behaviour?
• What if every so often an agent "turns round" to view the seats behind them?
• and so on

## Conclusion

We have seen how we can code up a basic agent based model for standing ovations. While the subject itself isn't particularly "useful" in of itself the principles are common to many other systems. We have also seen some of the considerations that go into an agent based model.

As a final remark it is worth noting that this is not how you would produce an agent based model in practice. Typically you would start with a simple model and add features gradually and test the impact, I did not want to write a series of long posts on this model so I "skipped to the end" coding in what I thought some pertinent features could be all at once (although I did not spend long thinking about them!)

## References

The original paper on standing ovation models presented by Scott Page and John Miller (can be seen here! for those wanting to read more about their version of the model.


text:
# First Search for Dark Matter Annihilation in the Sun Using the ANTARES Neutrino Telescope

Abstract : A search for high-energy neutrinos coming from the direction of the Sun has been performed using the data recorded by the ANTARES neutrino telescope during 2007 and 2008. The neutrino selection criteria have been chosen to maximize the selection of possible signals produced by the self-annihilation of weakly interacting massive particles accumulated in the centre of the Sun with respect to the atmospheric background. After data unblinding, the number of neutrinos observed towards the Sun was found to be compatible with background expectations. The $90\%$ CL upper limits in terms of spin-dependent and spin-independent WIMP-proton cross-sections are derived and compared to predictions of two supersymmetric models, CMSSM and MSSM-7. The ANTARES limits are competitive with those obtained by other neutrino observatories and are more stringent than those obtained by direct search experiments for the spin-dependent WIMP-proton cross-section.
Type de document :
Article dans une revue
Journal of Cosmology and Astroparticle Physics, Institute of Physics (IOP), 2013, 11, pp.032. 〈10.1088/1475-7516/2013/11/032〉
Domaine :

http://hal.in2p3.fr/in2p3-01071611
Contributeur : Danielle Cristofol <>
Soumis le : lundi 6 octobre 2014 - 12:26:55
Dernière modification le : jeudi 7 février 2019 - 16:46:09

### Citation

S. Adrián-Martinez, I. Al Samarai, A. Albert, M. André, M. Anghinolfi, et al.. First Search for Dark Matter Annihilation in the Sun Using the ANTARES Neutrino Telescope. Journal of Cosmology and Astroparticle Physics, Institute of Physics (IOP), 2013, 11, pp.032. 〈10.1088/1475-7516/2013/11/032〉. 〈in2p3-01071611〉

### Métriques

Consultations de la notice


text: Prayers That Avail Much Personal Confessions, Because the volt unit is used, potential difference is also called “voltage”. Relationship between Potential Difference and Current Experiment Aim: To investigate the relationship between current and potential difference for a metal wire. Potential difference is the energy dissipated as the unit charge passes through the components. In the previous section of Lesson 1, the concept of electric potential was introduced. An ammeter is used in a circuit to record the current. If an electron is placed between a negatively-charged body and a positively-charged body, the action due to the potential difference is to push the electron toward the positively-charged object. Although current was originally thought to be a flow of positive charge, we now know that in most cases it is only the very tiny negatively charged electrons that flow through wires as a current. It is named after the Italian physicist Alessandro Volta (1745–1827). A volt is also defined as that amount of force required to force one ampere of current through one ohm of resistance. The energy difference that tends to make an electric charge or current move. It is named after the Italian physicist Alessandro Volta (1745–1827). Potential Difference (Pd) E.m.f is the energy supplied to the unit charge by the cell. Giorgos Donis Maccabi, This tells you how much energy is available to push electric charges through a circuit. And similarl… If a charged body is placed between two objects with a potential difference, the charged body will try to move in one direction, depending upon the polarity of the object. SOURCE: Handbook of electrical science Volume-1 – Download HERE. There is a potential difference between the electrode and the electrolyte called the potential of the electrode. Is Juan Fernandez Married, This information should not be considered complete, up to date, and is not intended to be used in place of a visit, consultation, or advice of a legal, medical, or any other professional. Cns Prophylaxis Leukemia, Get access to premium HV/MV/LV technical articles, electrical engineering guides, research studies and much more! The equivalent resistance for a group of parallel resistors is. The sum of the potential differences of all charged particles in the electrostatic field is referred to as electromotive force (EMF). Because the volt unit is used, potential difference is also called “ voltage ” Tigers Players Afl, It depends on context. The D Parking Garage, If the potential difference is an electromotive force, then it's symbol is usually E. For all other potential differences (e.g. How quickly the electric charges are moving through the circuit. Belle Histoire D'amour, Father Of The Bride Frank Gif, When discussing electrical energy there are several important quantities that must be understood. The emf (electromotive force) is the potential difference between the terminals of a battery when no current is flowing through an external circuit when the circuit is open. Potential difference is commonly referred to as voltage. Comedy Football Films, The symbol for potential difference is “ V ” indicating the ability to do the work of forcing electrons to move. 1998 N Roselle Rd, Schaumburg, Il 60195, One Volt is defined as energy consumption of one joule per electric charge of one coulomb. The value of oxidation potential of any electrode is equal to negative the value of reduction potential of the same electrode, E.M.F. One volt is equal to current of 1 amp times resistance of 1 ohm: 1V = 1A ⋅ 1Ω. Tina Rodriguez Baby, Pie In A Roll, Your email address will not be published. The potential difference tells you how much energy per coulomb the charges have to lose. The energy the charges have to lose is referred to as the 'potential difference'. Hockey Games In Asheville Nc, Rawi Hage, Pagkakaiba ng pagsulat ng ulat at sulating pananaliksik? Remember that the current meter is ideal. Ano ang mga kasabihan sa sa aking kababata? Marvel Candy Bowl Holder, This path is an ELECTRIC CIRCUIT that provides a way for the charges to lose their excess energy as they travel around the circuit. One Volt is defined as energy consumption of one joule per electric charge of one coulomb. Potential difference is commonly referred to as voltage. What is the hink-pink for blue green moray? The value of oxidation potential of any electrode is equal to negative the value of reduction potential of the same electrode, E.M.F. The familiar term voltage is the common name for potential difference. A volt is defined as a difference of potential causing one coulomb of current to do one joule of work. Potential difference can also be measured using the formula V=IR, where I is the current charge and R is the resistance. The potential difference between points A and B, $$V_{\mathrm{B}}-V_{\mathrm{A}}$$, defined to be the change in potential energy of a charge $$q$$ moved from A to B, is equal to the change in potential energy divided by the charge, Potential difference is commonly called voltage, represented by the symbol $$\Delta V$$. For example, if an object gains one coulomb of negative charge, it has gained 6,280,000,000,000,000,000 extra electrons. This is just like the rock on the hill. Potential Energy Equation, It helps you. Electrons resulting from the beta decay of radium caused a, In the simplest of terms, work is done (energy generated) by a charge when it moves between two points across which a, The electrodes in layers separating surfaces and outer surfaces indicate the, Suppose the supercurrent flows in the junction at vanishing, The electrode potentials at 25[degrees]C for the anode, [[phi].sub.A], and cathode, [[phi].sub.C], together with the fuel cell, From Figure 4, we find that only the electric field produced by the positive, Then, the numerical experiments for A and B obtain the values of the, To further define the threshold connected factors of OFDI reverse spillover, the study introduces the technology, Western countries who want to end the civil war and see the emergence of a new and more inclusive regime in Syria need to exploit any, The Model: DCD is capable of reducing the, Dictionary, Encyclopedia and Thesaurus - The Free Dictionary, the webmaster's page for free fun content, Prototype Nuclear Battery Packs 10 Times More Power, CALCULATION OF CYLINDRICAL MULTILAYER ELECTROMECHANICAL TRANSDUCER AT DIFFERENT POLARIZATION TYPES IN NON-STATIONARY MODES, Detection of Reinforcement Corrosion in Reinforced Concrete Structures by Potential Mapping: Theory and Practice, An Investigation of Direct Hydrocarbon (Propane) Fuel Cell Performance Using Mathematical Modeling, Investigation on Potential-Induced Degradation in a 50MWp Crystalline Silicon Photovoltaic Power Plant, Modelling the Influence of Ground Surface Relief on Electric Sounding Curves Using the Integral Equations Method, Development of high voltage wire for new structure motor in full hybrid vehicle, An empirical study on spatial heterogeneity of manufacturing OFDI reverse technology spillover and dynamic threshold of absorption capacity, Interprovincial Corrosion Control Co. Ltd, Potential Conflict to Cooperation Potential, Potential Energy & Renewable Resource Mapping, Potential Energy Annealing Conformational Search.


text:
Click to Chat

1800-2000-838

+91-120-4616500

CART 0

• 0

MY CART (5)

Use Coupon: CART20 and get 20% off on all online Study Material

ITEM
DETAILS
MRP
DISCOUNT
FINAL PRICE
Total Price: R

There are no items in this cart.
Continue Shopping
Get instant 20% OFF on Online Material.
coupon code: MOB20 | View Course list

Get extra R 520 off
USE CODE: MOB20

1.      Exactly 0.200 mole electrons is passed through two electrolytic cells in series. One contains silver ion, and the other, zinc  ion .assume that the only cathode reaction in each cell is the reduction  of the ion to the metal. How many grams of each metal will be deposited? (at. Mass of zn = 65, ag = 108)
a.       108g ag and 65 g zn.
b.      108 ag and 32.5g zn.
c.       21.6 ag and 6.5 g zn.
d.      21.6 g ag and 13 g zn.

2.       A steady current of 30.0A for 70.2 min corresponds to a passage of                                                  a.   1.2610^5  electrons.
b.  1.26×10^5 f.
c.  1.31 f.
d.  1.31 c.

3.   Cu+ is not stable and undergoes disproportion. E for cu+ disproportionation.
(E°  cu2+/cu =0.153V , E°  cu+/cu=0.53V).

7 years ago

Share

										Hi
Ans 1:
For silver , the conversion is Ag+ + e- -> Ag
Therefore 1 mole of electrons are reqd to make 1 mole i.e 108 gm of silver. hence .2 moles of electron will make .2x108 = 21.6 gm of silver.

For zinc, the connversion is Zn2+ + 2e- -> Zn
Therefore 2 moles of elctrons are reqd to make 1 mole i.e 65 gm of zinc, hence .2 mole electrons shall make .2x65/2 = 6.5 gm of zinc.

7 years ago
										Hi
Ans 2:
For a steady flow, the current I in amperes can be calculated with the following equation:
$I = {Q \over t}$
where
Q is the electric charge in coulombs transferred t is the time in seconds
More generally, electric current can be represented as the time rate of change of charge, or
$I = \frac{dQ}{dt}$.
therefore, Q= 30 A x 70.2 x 60 sec = 126360 coulombs
1 faraday = 96 485.3415 coulombs

7 years ago
										Hi
Please repost the third question, the question is not clear.

7 years ago
										1)       for silver deposition :       Ag+     +     e-             ------>   Ag
1 mole                   1 mole
so , 0.2 moles of Ag is deposited i.e., 0.2*108 = 21.6 grams

for zinc deposition :   Zn2+     +   2e-                ------>    Zn
2 mole                       1 mole
so , 0.1 moles of Zn is deposited i.e., 0.1*65 =  6.5 grams
So option is C

2)   Electric current is the rate of charge flow past a given point in an electric circuit, measured in Coulombs/second which is named Amperes
so Q = i*t
Q=30*70.2*60
Q = 126360 Coulombs
but 1 faraday = 96485 Coulombs
So its Q = 1.31 faraday
So option is C

3) I want to make a small correction to question reg. elecric potential of  cu2+/cu+ ( taken frm standard books )

Its cu2+/cu+ =0.153V  i.e.,                     cu2+ + e-   ------>  cu+            E0 = 0.153 V

Now going into problem:  Cu+ solutions, tend to give a disproportion reaction:

2Cu+ ----- >   Cu + Cu2+

cu+ + e-    ------>  cu                                E0 = 0.53 V        so,  nE0 = 0.53 V

cu+            ------>  cu2+ + e-               E0 = - 0.153 V       so,   nE0 = - 0.153 V

on adding above rxns we get
2Cu+ ----- >   Cu + Cu2+                  with  E0 = +0.377 V

7 years ago

# Other Related Questions on Physical Chemistry

what is meant by entropy..........................................................?

@ sharda entropy of a system is actually the measurement of degree of randomess ordisorderliness of a system . it is a thermodynamic property and represented by a letter S . the entropyof...

 Umakant biswal 4 months ago

entropy is the sudden change in randomness of the system due to may be from exapnding, contracting, collision etc. small example → take a glass of water and Eno. eno prsesnt in packed...

 cris gayle 4 months ago

entropy is the sudden change in randomness of the system due to may be from exapnding, contracting, collision etc. small example → take a glass of water and Eno. eno prsesnt in packed paper...

 Vikas TU 4 months ago
In the chapter Solid State Class 12, how to classify any solid or elements on the basis of their bonds i.e. covalent bond, molecular bond etc ???

Depending upon the type of bonding present , Solids can be divided as : 1) Covalent Solids 2) Ionic solids 3) Molecular solids 4) Metallic solids

Ok , thats the same thing i told , u just need to see the configuration of examples . i am giving that below potassium sulphate – ionic solid tin – mettalic solid benzene – molecular (non...

 Umakant biswal 6 months ago

@ shreyas On the besic of bond present there are no such classification as tetraphosphorous decosides , and aluminium phosphates . Besic of the bond there are 4 types of classification 1-...

 Umakant biswal 6 months ago
what is the oxidation state of sulphur in H 2 S 2 O 8, Na 2 S 4 O 8 and Na 2 S 2 O 3.

@ bhavika in H2S2O8, since 2 oxygen is forming the peroxide linkage here , so, the o.n of sulpher will be +6 . and in the 2 nd case NA2S4O8 , in thaat case take sulpher o.n to be x after...

 Umakant biswal 6 months ago

You no longer have to wait desperately for someone to help resolve your doubt. You can chat with IITians live, 24/7 (even at 3AM!) and get your doubt resolved instantly. Try the HashLearn...

 Ankit 6 months ago

u need to remember that which structure have peroxide linkage and which structure have not , there are only some exception with peroxide linkage , go through the ncert redox reaction chapter...

 Umakant biswal 6 months ago
the hybridization of phosphorus in PCl 5 (in solid state ) is 1)sp 3 2)sp 3 d 2 3)sp 3 d 4)both 1 and 2

sp3d is the right answer. In excited state, intermixing of a 3s, three 3p and one 3d orbitals gives five half filled sp 3 d hybrid orbitals, which are arranged in trigonal bipyramidal...

 dolly bhatia one month ago

@ krishna option no 3 turns out to be the correct option , here , the orbitals are filled by electrons of five cl atom . there are 5 p-cl sigma bond , three in one plane and make an angle of...

 Umakant biswal 3 months ago

i hope to no.3 because phosphours atom contain in last subshell is 5 electron and not contain a lone pair and here is 5 chlorine atom .then we add up eletron and we get a 10 and we devided...

 sahabudin ali 2 months ago

It should be option 4 as PCl5 exists in ［PCl4］+ and ［PCl6］- in solid state....as in first case it is Sp3 and that in second it is Sp3d2

 4 days ago
sir iam a iiit students in RAGIV GANDHI UNIVERSITY OF TECHNOLOGIES, there is a semister it infront of me in 10 days.i don’t know any thing about chemistry.it is a ncert syllubus.please send...

@ badugu they are ncert books topic , i am mentioning some imp chapter name below 1- COORDINATION COMPOUND ( PART 2 CHEMI ) 2- GENERAL PRINCIPLES OF ORGANIC CHEMISTRY ( 11TH 2ND PART ) 3-...

 Umakant biswal one month ago

Dear Vijay, Go through these topics first as atmost importat ones: Aldehyde and Ketones Biomolecules Alcohols and ethers Coordination Compounds Solid states Electrrochemistry Solutions D and...

 Vikas TU one month ago

@ badugu , kindly be specific in asking the ques , earlier u told that u have ncert syllabus , and i have given the chapters from ncert textbooks only . kindly conform which publication u...

 Umakant biswal one month ago
How many unpaired electrons are present in superoxide ion?

But the answer is 3.. As in molecular orbital theory the unpaired electrons in oxygen molecule is 2.. It accepts 1 electron to form superoxide ion.. That electron instead of pairing with 2...

 Suraj Singh 16 days ago

And now I am agree with my solution.. You should check it once.... .. And thanq for the concern... .....

 Suraj Singh 16 days ago

It`s unfortunately wrong..................................... ................. NOť less than 100 char

 Suraj Singh 17 days ago
View all Questions »

• Complete JEE Main/Advanced Course and Test Series
• OFFERED PRICE: R 15,000
• View Details
Get extra R 3,000 off
USE CODE: MOB20

Get extra R 520 off
USE CODE: MOB20

More Questions On Physical Chemistry